UPF18030-095
30W, 1.88 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
This device is designed for DCS base station applications in the frequency band 1.805 GHz to
1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,
and Multi-Carrier Power Amplifiers in Class AB operation.
ALL GOLD metal system for highest reliability.
Industry standard package.
Suggested alternative to the MRF19030
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Application Specific Performance, 1.88 GHz
Package Type 440095
PN: UPF18030-095
GSM:
30
Watts 11.6
dB
Edge:
18
Watts 12
dB
IS95
4
Watts
12
dB
W-CDMA
4
Watts
12
dB
Typical EDGE Performance (ETSI 300-910 GSM 05.05 v. 5.5.1)
Average
Load
Power
18W
PAE
30%
Power
Gain
12
dB
ACPR1
57 dBc
(30 kHz BW offset
400 kHz
normalized to total power in a 30 Khz BW)
ACPR2
66 dBc
(30 kHz BW offset
600 kHz
normalized to total power in a 30 kHz BW)
Page 1 of 4
UPF18030-095 Rev. 2
UPF18030-095
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, gate connected to source
V
DSS
65
Volts
Gate to Source Voltage
V
GSS
15 to 0.5
Volts
Total Device Dissipation @ TC = 70
o
C
Derate above 70
o
C
P
D
65.0
0.5
Watts
W/
o
C
Storage Temperature Range
T
STG
-65 to +150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristics Symbol
Typical
Unit
Thermal Resistance, Junction to Case
jc
1.2
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
= 0, I
DS
= 1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
= 26V, V
GS
= 0)
I
DSS
- -
1.0
mA
Gate to Source Leakage current
(V
GS
= 15V, V
DS
= 0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
= 10V, I
DS
= 1mA)
V
GS
(th) - 3.5
-
Volts
Gate Quiescent Voltage
(V
DS
= 26 V, I
DS
= 250mA)
V
GS
(on) 3.0 4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
= 10V, I
DS
= 1A
V
DS
(on) - 0.28
-
Volts
Forward Transconductance
(V
DS
= 10V, I
D
= 5A)
G
M
1.4
1.8
-
S
Page 2 of 4
UPF18030-095 Rev. 2
UPF18030-095
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Output capacitance*
(V
DS
= 26V, V
GS
=0V, freq= 1MHz)
C
OSS
- 26
-
pF
Feedback capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz
C
RSS
-
1.2
-
pF
*Product is internally matched on input.
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
CW Small Signal Gain, P
OUT
=0.1W
(V
DD
=26V, I
DQ
=250mA
G
L
10.0
12.5
-
dB
CW Power Gain, P
OUT
=30W
(V
DD
=26V, I
DQ
=250mA
G
P
11.0
12.0
-
dB
CW Drain Efficiency, P
OUT
=30W
f1=1840 MHz, V
DD
=26V, I
DQ
=250mA
D
35 42 -
%
Two Tone Common Source Amplifier Power
Gain, V
DD
=26V, I
DQ
=250mA, P
OUT
=30W PEP
f1=1805 MHz and 1880 MHz, Tone Spacing =
100 kHz
G
TT
11.0
12.0
-
dB
Two-Tone Intermodulation Distortion
(V
DD
=26V, I
DQ
=250mA, P
OUT
=30W PEP
f1=1805 MHz and 1880 MHz, Tone Spacing =
100 kHz
I
MD
-29
-33
-
dBc
Tow-Tone Drain Efficiency
V
DD
=26V, I
DQ
=250mA, P
OUT
=30W,
f1=1805 MHz and 1880 MHz, Tone Spacing =
100 kHz
D2t
30 32 -
%
Input Return Loss
V
DD
=26V, I
DQ
=250mA, P
OUT
=30W PEP
f1=1805 MHz and 1880 MHz, Tone Spacing =
100 kHz
IRL -
-8
-
dB
Load Mismatch Tolerance
(V
DS
=26V, I
DQ
=250mA, P
OUT
=30W, f=1805 MHz)
VSWR 10:1 - -
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed
Page 3 of 4
UPF18030-095 Rev. 2
Page 4 of 4
UPF18030-095 Rev. 2
UPF18030-095
Product Dimensions
UPF18030-095 -Package Number 440095
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